GT042P06T
Goford Semiconductor
Product No:
GT042P06T
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
Description:
MOSFET, P-CH,-60V,-160A,RD(MAX)<
Quantity:
In Stock : 50
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.603
10
2.1603
100
1.7195
500
1.454944
1000
1.234496
2000
1.172775
5000
1.128676
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Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| Power Dissipation (Max) | 280W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9151 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
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