PMPB40SNA115
NXP USA Inc.
Product No:
PMPB40SNA115
Manufacturer:
Package:
DFN2020MD-6
Batch:
-
Datasheet:
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
In Stock : 1000
Minimum: 1 Multiples: 1
Qty
Unit Price
1000
0.304
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4.8A, 10V |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Supplier Device Package | DFN2020MD-6 |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 612 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback