TK14E65W,S1X

Toshiba Semiconductor and Storage

Product No:

TK14E65W,S1X

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 13.7A TO220

Quantity:

In Stock : 50

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 690µA
Base Product Number	TK14E65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	250mOhm @ 6.9A, 10V
Power Dissipation (Max)	130W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	13.7A (Ta)