TK28N65W,S1F

Toshiba Semiconductor and Storage

Product No:

TK28N65W,S1F

Manufacturer:

Package:

TO-247

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 27.6A TO247

Quantity:

In Stock : 30

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1.6mA
Base Product Number	TK28N65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	110mOhm @ 13.8A, 10V
Power Dissipation (Max)	230W (Tc)
Supplier Device Package	TO-247
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	27.6A (Ta)