TK2R4E08QM,S1X

Toshiba Semiconductor and Storage

Product No:

TK2R4E08QM,S1X

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

UMOS10 TO-220AB 80V 2.4MOHM

Quantity:

In Stock : 186

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 2.2mA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	2.44mOhm @ 50A, 10V
Power Dissipation (Max)	300W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	178 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)