Toshiba Semiconductor and Storage
Product No:
TK6R8A08QM,S4X
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
UMOS10 TO-220SIS 80V 6.8MOHM
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.1495
10
0.93765
100
0.72941
500
0.61826
1000
0.503642
2000
0.474116
5000
0.451544
10000
0.430702
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Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSX-H |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 500µA |
Operating Temperature | 175°C |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 29A, 10V |
Power Dissipation (Max) | 41W (Tc) |
Supplier Device Package | TO-220SIS |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Drain to Source Voltage (Vdss) | 80 V |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 40 V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |