Home / Single FETs, MOSFETs / TK8S06K3L(T6L1,NQ)

TK8S06K3L(T6L1,NQ)

Toshiba Semiconductor and Storage

Product No:

TK8S06K3L(T6L1,NQ)

Package:

DPAK+

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 8A DPAK

Quantity:

In Stock : 1948

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.1495

  • 10

    1.0279

  • 100

    0.80104

  • 500

    0.66177

  • 1000

    0.522443

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series U-MOSIV
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Base Product Number TK8S06
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 54mOhm @ 4A, 10V
Power Dissipation (Max) 25W (Tc)
Supplier Device Package DPAK+
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)