1N5406GHB0G
Taiwan Semiconductor Corporation
Product No:
1N5406GHB0G
Manufacturer:
Package:
DO-201AD
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 600V 3A DO201AD
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Taiwan Semiconductor Corporation |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Product Status | Active |
| Base Product Number | 1N5406 |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Supplier Device Package | DO-201AD |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A |
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