1N8035-GA

GeneSiC Semiconductor

Product No:

1N8035-GA

Manufacturer:

GeneSiC Semiconductor

Package:

TO-276

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 14.6A TO276

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr GeneSiC Semiconductor
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-276AA
Product Status Obsolete
Base Product Number 1N8035
Capacitance @ Vr, F 1107pF @ 1V, 1MHz
Supplier Device Package TO-276
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 5 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 14.6A
Operating Temperature - Junction -55°C ~ 250°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 15 A