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1SS307(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

1SS307(TE85L,F)

Package:

S-Mini

Batch:

-

Datasheet:

-

Description:

DIODE GEN PURP 30V 100MA S-MINI

Quantity:

In Stock : 9250

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.342

  • 10

    0.2793

  • 100

    0.19038

  • 500

    0.142766

  • 1000

    0.107084

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Speed Small Signal =< 200mA (Io), Any Speed
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Base Product Number 1SS307
Capacitance @ Vr, F 6pF @ 0V, 1MHz
Supplier Device Package S-Mini
Current - Reverse Leakage @ Vr 10 nA @ 30 V
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) 100mA
Operating Temperature - Junction 125°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 100 mA