630AT
Goford Semiconductor
Product No:
630AT
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N200V,RD(MAX)<250M@10V,RD(MAX)<3
Quantity:
In Stock : 63
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.8265
10
0.71725
100
0.496565
500
0.414884
1000
0.353096
2000
0.314478
5000
0.29792
10000
0.275861
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Power Dissipation (Max) | 83W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Quick Links
Feedback