ESH1JM RSG

Taiwan Semiconductor Corporation

Product No:

ESH1JM RSG

Package:

Micro SMA

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 600V 1A MICRO SMA

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case 2-SMD, Flat Lead
Product Status Obsolete
Base Product Number ESH1
Capacitance @ Vr, F 3pF @ 4V, 1MHz
Supplier Device Package Micro SMA
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 1 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 1 A