Fairchild Semiconductor
Product No:
FDMD8900
Manufacturer:
Package:
12-Power3.3x5
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, N
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
304
0.9405
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Mfr | Fairchild Semiconductor |
Series | - |
Package | Bulk |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Power - Max | 2.1W |
Configuration | 2 N-Channel (Dual) |
Mounting Type | Surface Mount |
Package / Case | 12-PowerWDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Base Product Number | FDMD89 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 4mOhm @ 19A, 10V |
Supplier Device Package | 12-Power3.3x5 |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 2605pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 19A, 17A |