FDP12N60NZ

Fairchild Semiconductor

Product No:

FDP12N60NZ

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Fairchild Semiconductor
Series UniFET-II™
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Power Dissipation (Max) 240W (Tc)
Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1676 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)