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FESB16JT-E3/81

Vishay General Semiconductor - Diodes Division

Product No:

FESB16JT-E3/81

Package:

TO-263AB (D²PAK)

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 600V 16A TO263AB

Quantity:

In Stock : 1241

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.634

  • 10

    1.35375

  • 100

    1.07768

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Product Information

Parameter Info
Mfr Vishay General Semiconductor - Diodes Division
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Base Product Number FESB16
Capacitance @ Vr, F 145pF @ 4V, 1MHz
Supplier Device Package TO-263AB (D²PAK)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 16A
Operating Temperature - Junction -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 16 A