FQB33N10TM
Fairchild Semiconductor
Product No:
FQB33N10TM
Manufacturer:
Package:
D2PAK (TO-263)
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 16.5A, 10V |
| Power Dissipation (Max) | 3.75W (Ta), 127W (Tc) |
| Supplier Device Package | D2PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback