G3S12010BM

Global Power Technology-GPT

Product No:

G3S12010BM

Package:

TO-247AB

Batch:

-

Datasheet:

Description:

SIC SCHOTTKY DIODE 1200V 10A 3-P

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Cut Tape (CT)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Diode Configuration 1 Pair Common Cathode
Supplier Device Package TO-247AB
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max) 1200 V
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Current - Average Rectified (Io) (per Diode) 19.8A (DC)