G5S12002C

Global Power Technology-GPT

Product No:

G5S12002C

Package:

TO-252

Batch:

-

Datasheet:

Description:

DIODE SIL CARB 1.2KV 8.8A TO252

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Cut Tape (CT)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Capacitance @ Vr, F 170pF @ 0V, 1MHz
Supplier Device Package TO-252
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 8.8A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 2 A