GT60N321(Q)
Toshiba Semiconductor and Storage
Product No:
GT60N321(Q)
Manufacturer:
Package:
TO-3P(LH)
Batch:
-
Datasheet:
-
Description:
IGBT 1000V 60A 170W TO3P LH
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 170 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Product Status | Obsolete |
| Test Condition | - |
| Switching Energy | - |
| Base Product Number | GT60N321 |
| Td (on/off) @ 25°C | 330ns/700ns |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-3P(LH) |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Reverse Recovery Time (trr) | 2.5 µs |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
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