HS1DL R3G

Taiwan Semiconductor Corporation

Product No:

HS1DL R3G

Package:

Sub SMA

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 200V 1A SUB SMA

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case DO-219AB
Product Status Active
Base Product Number HS1D
Capacitance @ Vr, F 20pF @ 4V, 1MHz
Supplier Device Package Sub SMA
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A