HTNFET-D

Honeywell Aerospace

Product No:

HTNFET-D

Manufacturer:

Honeywell Aerospace

Package:

8-CDIP-EP

Batch:

-

Datasheet:

Description:

MOSFET N-CH 55V 8CDIP

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Honeywell Aerospace
Series HTMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) 10V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case 8-CDIP Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 100µA
Base Product Number HTNFET
Operating Temperature -55°C ~ 225°C (TJ)
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Power Dissipation (Max) 50W (Tj)
Supplier Device Package 8-CDIP-EP
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C -