IDT10S60C
Infineon Technologies
Product No:
IDT10S60C
Manufacturer:
Package:
PG-TO220-2-2
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 600V 10A TO220-2
Quantity:
In Stock : 1479
Minimum: 1 Multiples: 1
Qty
Unit Price
79
3.648
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | thinQ!™ |
| Package | Bulk |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 480pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 140 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 10A (DC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
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