IPD65R250E6
Infineon Technologies
Product No:
IPD65R250E6
Manufacturer:
Package:
PG-TO252
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Series | CoolMOS E6™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 400µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 4.4A, 10V |
| Power Dissipation (Max) | 208W (Tc) |
| Supplier Device Package | PG-TO252 |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 16.1A (Tc) |
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