IPI320N203G

Infineon Technologies

Product No:

IPI320N203G

Manufacturer:

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : 350

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 90µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	32mOhm @ 34A, 10V
Power Dissipation (Max)	136W (Tc)
Supplier Device Package	PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)