Infineon Technologies
Product No:
IPI80N03S4L-03
Manufacturer:
Package:
PG-TO262-3-1
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
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Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 90µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
Power Dissipation (Max) | 136W (Tc) |
Supplier Device Package | PG-TO262-3-1 |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 9750 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |