IPI80N03S4L-03

Infineon Technologies

Product No:

IPI80N03S4L-03

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 90µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V
Power Dissipation (Max) 136W (Tc)
Supplier Device Package PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 9750 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)