IPP65R600C6

Infineon Technologies

Product No:

IPP65R600C6

Manufacturer:

Package:

PG-TO220-3-1

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : 1791

Minimum: 1 Multiples: 1

Qty

Unit Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 210µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	600mOhm @ 2.1A, 10V
Power Dissipation (Max)	63W (Tc)
Supplier Device Package	PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)