IRF614

Harris Corporation

Product No:

IRF614

Manufacturer:

Package:

TO-220AB

Batch:

Datasheet:

Description:

ADVANCED POWER MOSFET

Quantity:

In Stock : 695

Minimum: 1 Multiples: 1

Qty

Unit Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	IRF614
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2Ohm @ 1.6A, 10V
Power Dissipation (Max)	36W (Tc)
Supplier Device Package	TO-220AB
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V
Drain to Source Voltage (Vdss)	250 V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)