IRFR1018EPBF-INF

Infineon Technologies

Product No:

IRFR1018EPBF-INF

Manufacturer:

Infineon Technologies

Package:

D-PAK (TO-252AA)

Batch:

-

Datasheet:

-

Description:

HEXFET POWER MOSFET

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 4V @ 100µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 8.4mOhm @ 47A, 10V
Power Dissipation (Max) 110W (Tc)
Supplier Device Package D-PAK (TO-252AA)
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)