IXTH2N150

IXYS

Product No:

IXTH2N150

Manufacturer:

IXYS

Package:

TO-247 (IXTH)

Batch:

-

Datasheet:

-

Description:

DISCMOSFET N-CH STD-HIVOLTAGE TO

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Product Information

Parameter Info
Mfr IXYS
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Base Product Number IXTH2
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 9.2Ohm @ 500mA, 10V
Power Dissipation (Max) 170W (Tc)
Supplier Device Package TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Drain to Source Voltage (Vdss) 1500 V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)