JAN1N5809US/TR
Microchip Technology
Product No:
JAN1N5809US/TR
Manufacturer:
Package:
B, SQ-MELF
Batch:
-
Datasheet:
-
Description:
DIODE GP 100V 3A SQ-MELF B
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | Microchip Technology |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Military, MIL-PRF-19500/477 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Product Status | Active |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Supplier Device Package | B, SQ-MELF |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
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