MSCSM170HRM451AG

Microchip Technology

Product No:

MSCSM170HRM451AG

Manufacturer:

Microchip Technology

Package:

-

Batch:

-

Datasheet:

Description:

PM-MOSFET-SIC-SP1F

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Microchip Technology
Series -
Package Bulk
Technology Silicon Carbide (SiC)
FET Feature Silicon Carbide (SiC)
Power - Max 319W (Tc), 395W (Tc)
Configuration 4 N-Channel (Three Level Inverter)
Mounting Type Chassis Mount
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 3.2V @ 2.5mA, 2.8V @ 3mA
Operating Temperature -40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Supplier Device Package -
Gate Charge (Qg) (Max) @ Vgs 178nC @ 20V, 232nC @ 20V
Drain to Source Voltage (Vdss) 1700V (1.7kV), 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 1000V, 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 64A (Tc), 89A (Tc)