MSRT200160A
GeneSiC Semiconductor
Product No:
MSRT200160A
Manufacturer:
Package:
Three Tower
Batch:
-
Datasheet:
-
Description:
DIODE MODULE 1.6KV 200A 3TOWER
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | GeneSiC Semiconductor |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Product Status | Active |
| Base Product Number | MSRT200 |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | Three Tower |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 1600 V |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 200 A |
| Current - Average Rectified (Io) (per Diode) | 200A (DC) |
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