MT3S111TU,LF

Toshiba Semiconductor and Storage

Product No:

MT3S111TU,LF

Package:

UFM

Batch:

-

Datasheet:

-

Description:

RF SIGE NPN BIPOLAR TRANSISTOR N

Quantity:

In Stock : 2940

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.5605

  • 10

    0.494

  • 25

    0.44612

  • 100

    0.39026

  • 250

    0.342456

  • 500

    0.302632

  • 1000

    0.238916

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Gain 12.5dB
Series -
Package Tape & Reel (TR)
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Product Status Active
Transistor Type NPN
Base Product Number MT3S111
Operating Temperature 150°C (TJ)
Frequency - Transition 10GHz
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 6V