MURT40010
GeneSiC Semiconductor
Product No:
MURT40010
Manufacturer:
Package:
Three Tower
Batch:
-
Datasheet:
Description:
DIODE MODULE 100V 200A 3TOWER
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | GeneSiC Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | Three Tower |
| Reverse Recovery Time (trr) | 125 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 200 A |
| Current - Average Rectified (Io) (per Diode) | 200A |
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