PHT6NQ10T,135
NXP USA Inc.
Product No:
PHT6NQ10T,135
Manufacturer:
Package:
SOT-223
Batch:
-
Datasheet:
-
Description:
3A, 100V, 0.09OHM, N-CHANNEL POW
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | NXP USA Inc. |
| Series | TrenchMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| Supplier Device Package | SOT-223 |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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