Home / 单 FET,MOSFET / PJQ4435EP-AU_R2_002A1

PJQ4435EP-AU_R2_002A1

Panjit International Inc.

Product No:

PJQ4435EP-AU_R2_002A1

Package:

DFN3333-8

Batch:

-

Datasheet:

-

Description:

30V P-CHANNEL ENHANCEMENT MODE M

Quantity:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.76

  • 10

    0.65455

  • 100

    0.45334

  • 500

    0.378803

  • 1000

    0.322392

  • 2000

    0.287128

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Panjit International Inc.
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 12.5mOhm @ 10A, 10V
Power Dissipation (Max) 2.5W (Ta), 41W (Tc)
Supplier Device Package DFN3333-8
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 11.2A (Ta), 45A (Tc)