NXP Semiconductors
Product No:
PSMN2R0-60ES,127
Manufacturer:
Package:
I2PAK
Batch:
-
Description:
NEXPERIA PSMN2R0-60ES - 120A, 60
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
215
1.33
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Mfr | NXP Semiconductors |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Base Product Number | PSMN2R0 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
Power Dissipation (Max) | 338W (Tc) |
Supplier Device Package | I2PAK |
Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 9997 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |