PSMN2R0-60ES,127

NXP Semiconductors

Product No:

PSMN2R0-60ES,127

Manufacturer:

NXP Semiconductors

Package:

I2PAK

Batch:

-

Datasheet:

Description:

NEXPERIA PSMN2R0-60ES - 120A, 60

Quantity:

In Stock : 7334

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 215

    1.33

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Product Information

Parameter Info
Mfr NXP Semiconductors
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number PSMN2R0
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V
Power Dissipation (Max) 338W (Tc)
Supplier Device Package I2PAK
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 9997 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)