PSMN8R5-100ESQ
NXP USA Inc.
Product No:
PSMN8R5-100ESQ
Manufacturer:
Package:
I2PAK
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Quantity:
In Stock : 975
Minimum: 1 Multiples: 1
Qty
Unit Price
486
0.589
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Product Information
Parameter Info
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| Power Dissipation (Max) | 263W (Tc) |
| Supplier Device Package | I2PAK |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
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