RD3S100AAFRATL

Rohm Semiconductor

Product No:

RD3S100AAFRATL

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 190V 10A TO252

Quantity:

In Stock : 1702

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.698

  • 10

    2.24295

  • 100

    1.784955

  • 500

    1.510348

  • 1000

    1.281512

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RD3S100
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
Power Dissipation (Max) 85W (Tc)
Supplier Device Package TO-252
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Drain to Source Voltage (Vdss) 190 V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)