RFD20N03

Harris Corporation

Product No:

RFD20N03

Manufacturer:

Harris Corporation

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : 10550

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 740

    0.3895

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Product Information

Parameter Info
Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Power Dissipation (Max) 90W (Tc)
Supplier Device Package I-PAK
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 20 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)