RJK03E1DNS-00#J5
Renesas Electronics America Inc
Product No:
RJK03E1DNS-00#J5
Manufacturer:
Package:
8-HWSON (3.3x3.3)
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
In Stock : 80000
Minimum: 1 Multiples: 1
Qty
Unit Price
276
1.0355
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | - |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 12.5A, 10V |
| Power Dissipation (Max) | 15W (Tc) |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback