RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage
Product No:
RN1909FE(TE85L,F)
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Quantity:
In Stock : 3948
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.3325
10
0.23085
100
0.116375
500
0.094981
1000
0.070462
2000
0.05928
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Base Product Number | RN1909 |
| Resistor - Base (R1) | 47kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | 22kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback