RN1909FE(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

RN1909FE(TE85L,F)

Package:

ES6

Batch:

-

Datasheet:

-

Description:

TRANS 2NPN PREBIAS 0.1W ES6

Quantity:

In Stock : 3948

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.3325

  • 10

    0.23085

  • 100

    0.116375

  • 500

    0.094981

  • 1000

    0.070462

  • 2000

    0.05928

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Product Number RN1909
Resistor - Base (R1) 47kOhms
Frequency - Transition 250MHz
Supplier Device Package ES6
Resistor - Emitter Base (R2) 22kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V