RN1965(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

RN1965(TE85L,F)

Package:

US6

Batch:

-

Datasheet:

-

Description:

TRANS 2NPN PREBIAS 0.2W US6

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Product Number RN1965
Resistor - Base (R1) 2.2kOhms
Frequency - Transition 250MHz
Supplier Device Package US6
Resistor - Emitter Base (R2) 47kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V