RN2712JE(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

RN2712JE(TE85L,F)

Package:

ESV

Batch:

-

Datasheet:

-

Description:

TRANS 2PNP PREBIAS 0.1W ESV

Quantity:

In Stock : 3995

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.437

  • 10

    0.30305

  • 100

    0.15314

  • 500

    0.124925

  • 1000

    0.092692

  • 2000

    0.077986

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Base Product Number RN2712
Resistor - Base (R1) 22kOhms
Frequency - Transition 200MHz
Supplier Device Package ESV
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V