RQ3E120GNTB

Rohm Semiconductor

Product No:

RQ3E120GNTB

Manufacturer:

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 12A 8HSMT

Quantity:

In Stock : 8655

Minimum: 1 Multiples: 1

Qty

Unit Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Base Product Number	RQ3E120
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	8.8mOhm @ 12A, 10V
Power Dissipation (Max)	2W (Ta), 16W (Tc)
Supplier Device Package	8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	590 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)