RQ3L070BGTB1
Rohm Semiconductor
Product No:
RQ3L070BGTB1
Manufacturer:
Package:
8-HSMT (3.2x3)
Batch:
-
Datasheet:
Description:
NCH 60V 20A, HSMT8G, POWER MOSFE
Quantity:
In Stock : 2970
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.874
10
0.78375
25
0.74404
100
0.611325
250
0.571444
500
0.504982
1000
0.398677
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Product Information
Parameter Info
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 24.7mOhm @ 7A, 10V |
| Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 20A (Tc) |
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