RS1E200GNTB
Rohm Semiconductor
Product No:
RS1E200GNTB
Manufacturer:
Package:
8-HSOP
Batch:
-
Datasheet:
Description:
MOSFET N-CH 30V 20A 8HSOP
Quantity:
In Stock : 2470
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.779
10
0.684
100
0.524305
500
0.414504
1000
0.331607
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Product Information
Parameter Info
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Base Product Number | RS1E |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3W (Ta), 25.1W (Tc) |
| Supplier Device Package | 8-HSOP |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
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