SI4800BDY-T1-GE3
Vishay Siliconix
Product No:
SI4800BDY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET N-CH 30V 6.5A 8SO
Quantity:
In Stock : 80
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.836
10
0.73815
100
0.56582
500
0.447317
1000
0.357856
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Base Product Number | SI4800 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 9A, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
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