SIDR626DP-T1-GE3

Vishay Siliconix

Product No:

SIDR626DP-T1-GE3

Manufacturer:

Package:

PowerPAK® SO-8DC

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 42.8A/100A PPAK

Quantity:

In Stock : 110

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 250µA
Base Product Number	SIDR626
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Supplier Device Package	PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	5130 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	42.8A (Ta), 100A (Tc)