SIHD4N80E-GE3
Vishay Siliconix
Product No:
SIHD4N80E-GE3
Manufacturer:
Package:
TO-252AA
Batch:
-
Datasheet:
Description:
MOSFET N-CH 800V 4.3A DPAK
Quantity:
In Stock : 3000
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.6055
10
1.33285
100
1.060865
500
0.897655
1000
0.761653
2000
0.723568
5000
0.696369
10000
0.673312
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHD4 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V |
| Power Dissipation (Max) | 69W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback